Influence of ion energy and substrate temperature on the optical and electronic properties of tetrah

The properties of amorphous carbon (a-C) deposited using a filtered cathodic vacuum arc as a function of the ion energy and substrate temperature are reported. The sp3 fraction was found to strongly depend on the ion energy, giving a highly sp3 bonded a-C denoted as tetrahedral amorphous carbon (ta-C) at ion energies around 100 eV. The optical band gap was found to follow similar trends to other diamondlike carbon films, varying almost linearly with sp2 fraction. The dependence of the electronic properties are discussed in terms of models of the electronic structure of a-C. The structure of ta-C was also strongly dependent on the deposition temperature, changing sharply to sp2 above a transition temperature, T1, of ≈200 °C. Furthermore, T1 was found to decrease with increasing ion energy. Most film properties, such as compressive stress and plasmon energy, were correlated to the sp3 fraction. However, the optical and electrical properties were found to undergo a more gradual transition with the deposition...

[1]  G. Amaratunga,et al.  Stationary carbon cathodic arc: Plasma and film characterization , 1996 .

[2]  G. Amaratunga,et al.  Tetrahedrally bonded amorphous carbon (ta-C) thin film transistors , 1996 .

[3]  M. Chhowalla,et al.  Amorphous diamond film by enhanced arc deposition , 1996 .

[4]  Jung,et al.  Preparation and properties of highly tetrahedral hydrogenated amorphous carbon. , 1996, Physical review. B, Condensed matter.

[5]  A. A. Voevodin,et al.  Pulsed laser deposition of diamond‐like amorphous carbon films from graphite and polycarbonate targets , 1995 .

[6]  Mckenzie,et al.  Ion implantation in tetrahedral amorphous carbon. , 1995, Physical review. B, Condensed matter.

[7]  J. Robertson,et al.  Nucleation during deposition of hydrocarbon ions as a function of substrate temperature , 1995 .

[8]  Eitan Grossman,et al.  Growth mechanisms of DLC films from C+ ions: experimental studies , 1995 .

[9]  J. Robertson.  Structural models of a-C and a-C:H , 1995 .

[10]  G. Amaratunga,et al.  Properties of n-type tetrahedral amorphous carbon (ta-C)/p-type crystalline silicon heterojunction diodes , 1995 .

[11]  Gilmer,et al.  Structural transformations and defect production in ion implanted silicon: a molecular dynamics simulation study. , 1995, Physical review letters.

[12]  Jungnickel,et al.  pi bonding versus electronic-defect generation: An examination of band-gap properties in amorphous carbon. , 1994, Physical review. B, Condensed matter.

[13]  H. Scheibe,et al.  DLC film deposition by Laser-Arc and study of properties , 1994 .

[14]  David Alan Drabold,et al.  Theory of diamondlike amorphous carbon. , 1994, Physical review. B, Condensed matter.

[15]  Grossman,et al.  Substantiation of subplantation model for diamondlike film growth by atomic force microscopy. , 1994, Physical review letters.

[16]  A. Anders,et al.  Metal plasma immersion ion implantation and deposition using vacuum arc plasma sources , 1994 .

[17]  R. Averback,et al.  Effect of viscous flow on ion damage near solid surfaces. , 1994, Physical review letters.

[18]  T. D. Rubia,et al.  Molecular dynamics studies of radiation effects in silicon carbide , 1994 .

[19]  Brown,et al.  Nitrogen doping of highly tetrahedral amorphous carbon. , 1993, Physical review. B, Condensed matter.

[20]  Chang,et al.  Complex dielectric function of amorphous diamond films deposited by pulsed-excimer-laser ablation of graphite. , 1993, Physical review. B, Condensed matter.

[21]  W. Fuhs,et al.  Electronic properties of amorphous carbon (a-C:H)☆ , 1993 .

[22]  Robertson,et al.  Properties of filtered-ion-beam-deposited diamondlike carbon as a function of ion energy. , 1993, Physical review. B, Condensed matter.

[23]  C. Davis,et al.  A simple model for the formation of compressive stress in thin films by ion bombardment , 1993 .

[24]  John Robertson,et al.  Deposition mechanisms for promoting sp3 bonding in diamond-like carbon , 1993 .

[25]  R. Lossy,et al.  Filtered arc deposition of amorphous diamond , 1992 .

[26]  M. Tamor,et al.  Diamond-like carbon films synthesized by cathodic arc evaporation☆ , 1992 .

[27]  John Robertson,et al.  Properties of diamond-like carbon , 1992 .

[28]  Nieminen,et al.  Molecular-dynamics simulation of the growth of diamondlike films by energetic carbon-atom beams. , 1992, Physical review letters.

[29]  McKenzie,et al.  Compressive-stress-induced formation of thin-film tetrahedral amorphous carbon. , 1991, Physical review letters.

[30]  R. Street,et al.  Hydrogenated amorphous silicon: Index , 1991 .

[31]  M. A. Tamor,et al.  Atomic constraint in hydrogenated diamond-like carbon , 1991 .

[32]  W. Eckstein,et al.  Subplantation model for film growth from hyperthermal species. , 1990, Physical review. B, Condensed matter.

[33]  V. Gupta,et al.  Intrinsic toughness of interfaces , 1989 .

[34]  King,et al.  Role of thermal spikes in energetic displacement cascades. , 1987, Physical review letters.

[35]  Robertson,et al.  Electronic and atomic structure of amorphous carbon. , 1987, Physical review. B, Condensed matter.

[36]  R. Standley,et al.  Determination of bonding in amorphous carbon films: a quantitative comparison of core-electron energy-loss spectroscopy and 13C nuclear magnetic resonance spectroscopy , 1986 .

[37]  William D. Davis,et al.  Analysis of the Electrode Products Emitted by dc Arcs in a Vacuum Ambient , 1969 .

[38]  G. V. Chester,et al.  Solid State Physics , 2000 .