Investigation of TlBr detector response under high-flux x-rays

Thallium bromide (TlBr) is a compound semiconductor with high density, high atomic numbers and wide bandgap. In addition, recent results indicate that the mobility-lifetime product of electrons can be quite high, approaching the values for CdTe and CZT. These properties make TlBr a very promising material for nuclear radiation detector at room temperature. In this paper we report on our investigation of the performance of planar TlBr detector under high flux x-rays irradiation. This study proposes an alternate contact method that reduces the polarization effects, and the afterglow for a wide range of high flux applications.

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