Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides.

Ultimate control of the defect distribution and local conduction path in a bipolar resistive switching (BRS) Pt/TiO2/Pt sample, which was in a unipolar reset state, is provided by means of voltage pulsing and the resulting time-transient current analysis. The limited amount of oxygen vacancies in this system allowed reversibly switching-diode-like current-voltage curves, which was also confirmed in another Magnéli-phase-containing Pt/WO3/Pt sample. Such careful control of the defect distribution allowed the achievement of a complementary resistive switching (CRS) curve even from a single switching layer. The unlimited vacancy source in the Pt/TiO2/TiO2-x/Pt sample did not allow the switching-diode type and the CRS behavior. The data retention of the on-state in the BRS was critically dependent on the shape of the rejuvenated conduction channel. The required time to lead to the rejuvenation of the conducting channel was ∼70-100 ns when the threshold voltage for the BRS set of ∼-1 V was applied.

[1]  Byung Joon Choi,et al.  Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films , 2007 .

[2]  Jae Hyuck Jang,et al.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.

[3]  Byung Joon Choi,et al.  Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .

[4]  D Ielmini,et al.  Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament , 2013, Advanced materials.

[5]  C. Hwang,et al.  The conical shape filament growth model in unipolar resistance switching of TiO2 thin film , 2009 .

[6]  Jea-Gun Park,et al.  Oxygen Ion Drift‐Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks , 2012 .

[7]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[8]  Jun Yeong Seok,et al.  Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model , 2010 .

[9]  D. Ielmini,et al.  Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth , 2011, IEEE Transactions on Electron Devices.

[10]  Ah Rahm Lee,et al.  Complementary resistive switching mechanism in Ti-based triple TiOx/TiN/TiOx and TiOx/TiOxNy/TiOx matrix , 2013 .

[11]  Cheol Seong Hwang,et al.  Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell , 2010 .

[12]  Jun Yeong Seok,et al.  Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt , 2013, Nanotechnology.

[13]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.

[14]  Cheol Seong Hwang,et al.  Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell , 2012, Nanotechnology.

[15]  S. Balatti,et al.  Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study , 2012, IEEE Transactions on Electron Devices.

[16]  Byung Joon Choi,et al.  A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure , 2011, Nanotechnology.

[17]  R. Tilley,et al.  Examination of substoichiometric WO3−x crystals by electron microscopy☆ , 1971 .

[18]  Shimeng Yu,et al.  Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays. , 2010, Nanotechnology.

[19]  V. Borisenko,et al.  Tungsten oxides. II. The metallic nature of Magnéli phases , 2010 .

[20]  M. Gillet,et al.  Phase transformations in WO3 thin films during annealing , 2002 .

[21]  Cheol Seong Hwang,et al.  Electronic bipolar resistance switching in an anti-serially connected Pt/TiO2/Pt structure for improved reliability , 2012, Nanotechnology.

[22]  Yuchao Yang,et al.  Complementary resistive switching in tantalum oxide-based resistive memory devices , 2012, 1204.3515.

[23]  S. Balatti,et al.  Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling , 2012, IEEE Transactions on Electron Devices.

[24]  Cheol Seong Hwang,et al.  Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM , 2013, Scientific Reports.

[25]  D. Ielmini,et al.  Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM , 2013, IEEE Electron Device Letters.