论文信息 - Development of a 2″‐AlGaN/GaN HEMT technology on sapphire and SiC for mm‐wave high‐voltage power applications - 字舞流文

Development of a 2″‐AlGaN/GaN HEMT technology on sapphire and SiC for mm‐wave high‐voltage power applications

H. Massler | A. Tessmann | K. Köhler | S. Ramberger | G. Weimann | R. Quay | R. Kiefer | M. Mikulla | F. Raay | S. Müller | T. Feltgen | B. Raynor | J. Schleife