Electroless Silver Plating Reflectors to Boost the Performance of Vertical Light-Emitting Diodes

In this paper, we experimentally demonstrated a novel approach known as electroless silver plating (ESP) for the fabrication of Ag-only reflectors on vertical light-emitting diodes (VLEDs). The Ag reflector that was obtained through the ESP approach shows a higher reflectance of 83% and a lower contact resistivity of 6 * 10-3 Ω · cm2 with p-GaN, compared with that fabricated through the conventional electron beam (EB) approach, which shows a reflectance of 75% and a contact resistivity of 6.2 * 10-2 Ω · cm2, respectively. Improvements in the light output intensity-current (L-I) and current-voltage (I-V) results in VLEDs, which originated from the high reflectance and low-contact resistivity of the incorporated ESP-Ag reflector. Our result opens up an alternative and promising way to substitute the traditional EB approach for Ag-based reflector fabrication and, thus, is practically meaningful in real device fabrication, such as with VLEDs.

[1]  Dezhen Wu,et al.  Reflective and conductive surface‐silvered polyimide films prepared by surface graft copolymerization and electroless plating , 2008 .

[2]  S. Kamiyama,et al.  High‐reflectivity Ag‐based p‐type ohmic contacts for blue light‐emitting diodes , 2009 .

[3]  H. Skriver,et al.  Surface energy and work function of elemental metals. , 1992, Physical review. B, Condensed matter.

[4]  Liancheng Wang,et al.  High-Performance Nitride Vertical Light-Emitting Diodes Based on Cu Electroplating Technical Route , 2016, IEEE Transactions on Electron Devices.

[5]  G. Whitesides,et al.  Use of Electroless Silver as the Substrate in Microcontact Printing of Alkanethiols and Its Application in Microfabrication , 1998 .

[6]  Ho Won Jang,et al.  Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization , 2001 .

[7]  Jing Li,et al.  Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA, >95%) , 2014 .

[8]  Min Gu,et al.  Optimized Electroless Silver Coating for Optical and Plasmonic Applications , 2012, Plasmonics.

[9]  T. Seong,et al.  Ohmic and degradation mechanisms of Ag contacts on p-type GaN , 2005 .

[10]  Dong-Hyun Kim,et al.  Temperature and thermal characteristics of InGaN/GaN vertical light-emitting diodes on electroplated copper , 2011 .

[11]  N. Ming,et al.  A facile colloidal templating method to monodisperse hollow Ag and Ag/Au submicrometer spheres , 2006 .

[12]  Jaehee Cho,et al.  Effects of p-Electrode Reflectivity on Extraction Efficiency of Nitride-Based Light-Emitting Diodes , 2008 .

[13]  Hui Yang,et al.  GaN grown on nano-patterned sapphire substrates* , 2015 .

[14]  Jiunn-Yi Chu,et al.  High Brightness GaN Vertical Light-Emitting Diodes on Metal Alloy for General Lighting Application , 2010, Proceedings of the IEEE.

[15]  Wang Liancheng,et al.  Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface , 2011 .

[16]  J. Kenney,et al.  Selective Electroless Metal Deposition Using Patterned Photo‐Oxidation of Sn(II) Sensitized Substrates , 1971 .

[17]  N. Cheung,et al.  Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off , 1999 .

[18]  Hongwei Zhu,et al.  Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes , 2012 .

[19]  C. Oshima,et al.  REVIEW ARTICLE: Ultra-thin epitaxial films of graphite and hexagonal boron nitride on solid surfaces , 1997 .

[20]  Michael R. Krames,et al.  High-power AlGaInN flip-chip light-emitting diodes , 2001 .

[21]  T. Seong,et al.  Formation of High-Quality Ohmic Contacts to p-GaN for Flip-Chip LEDs Using Ag ∕ TiN x ∕ Al , 2005 .

[22]  X. Yi,et al.  A subversive innovation on GaN P-type reflective electrode using electroless silver plating , 2015, 2015 12th China International Forum on Solid State Lighting (SSLCHINA).

[23]  Ho Won Jang,et al.  Mechanism for ohmic contact formation of Ni∕Ag contacts on p-type GaN , 2004 .

[24]  Jehyuk Choi,et al.  High-Power GaN-Based Light-Emitting Diodes Using Thermally Stable and Highly Reflective Nano-Scaled Ni–Ag–Ni–Au Mirror , 2011, IEEE Photonics Technology Letters.

[25]  Takhee Lee,et al.  Reflective and Low-Resistance Zn∕Rh Contacts to p-Type GaN for Flip-Chip Light-Emitting Diodes , 2005 .

[26]  Yasuo Koide,et al.  Development of Pt-based ohmic contact materials for p-type GaN , 2001 .

[27]  Robin L. McCarley,et al.  Selective Deposition of Metals on Plastics Used in the Construction of Microanalytical Devices: Photo-Directed Formation of Metal Features on PMMA† , 2001 .

[28]  M. Schlesinger Electroless and Electrodeposition of Silver , 2011 .