论文信息 - Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well

Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well

The lowest room-temperature threshold current density, 26 A/cm/sup 2/, of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In/sub 0.15/Ga/sub 0.85/As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 /spl mu/m.

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