论文信息 - Si(100)‐(2×1)boron reconstruction: Self‐limiting monolayer doping

Si(100)‐(2×1)boron reconstruction: Self‐limiting monolayer doping

A (2×1) surface reconstruction distinct from the clean Si(100)‐(2×1) surface is formed by depositing boron onto silicon in ultrahigh vacuum. Overgrowth of epitaxial silicon at low temperature preserves a (2×1) superstructure of substitutional boron. Hall‐effect measurements at 4.2 K show complete electrical activity for boron coverages of 1/2 monolayer, but additional boron above 1/2 monolayer is not electrically active.

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