A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits

A physics-based scalable transistor model is described which allows accurate consideration of avalanche-breakdown effects in bipolar circuit simulation. The three-dimensional model consists of six lumped transistor elements, which are connected via elements of the base and emitter-contact resistance. Analytical relations are given to calculate the elements of this six-transistor model (6TM) for arbitrary emitter dimensions from measured area- and length-specific transistor parameters. As a core of the transistor elements, all kinds of conventional transistor models can be used provided an adequate avalanche current source is implemented between the internal collector and base nodes. The validity of this 6TM has been verified under dc and fast transient conditions by simulations and measurements.

[1]  Hans-Martin Rein.  Si AND SiGe BIPOLAR ICs FOR 10 TO 40 Gb/s OPTICAL-FIBER TDM LINKS , 1998 .

[2]  Hans-Martin Rein,et al.  Physics- and process-based bipolar transistor modeling for integrated circuit design , 1999, IEEE J. Solid State Circuits.

[3]  Michael Schroter,et al.  Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditions , 1991 .

[4]  H. Rein.  Relationship between transient response and output characteristics of avalanche transistors , 1977 .

[5]  H. Rein,et al.  Einschnüreffekt bei Transistoren mit Streifengeometrie (Pinch-in effect in transistors with emitter-stripe geometry) , 1971 .

[6]  Hans-Martin Rein,et al.  Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage , 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

[7]  R. V. Overstraeten,et al.  Measurement of the ionization rates in diffused silicon p-n junctions , 1970 .

[8]  W. Maes,et al.  Impact ionization in silicon: A review and update , 1990 .

[9]  Ching-Te Chuang,et al.  Effect of reverse base current on bipolar and BiCMOS circuits , 1992 .

[10]  D. J. Walkey,et al.  Physical modeling of lateral scaling in bipolar transistors , 1996 .

[11]  Michael Schroter,et al.  Simulation and modeling of the low-frequency base resistance of bipolar transistors and its dependence on current and geometry , 1991 .

[12]  H. Rein,et al.  Der einfluss des basisbahnwiderstandes und der ladungsträgermultiplikation auf das ausgangskennlinienfeld von planartransistoren , 1972 .

[13]  J. R. Hauser,et al.  The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries , 1964 .

[14]  Hans-Martin Rein,et al.  Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors , 2001 .

[15]  Michael Schroter,et al.  TRANSIENT AND SMALL‐SIGNAL HIGH‐FREQUENCY SIMULATION OF NUMERICAL DEVICE MODELS EMBEDDED IN AN EXTERNAL CIRCUIT , 1991 .

[16]  Hans-Martin Rein.  Calculation of the breakdown characteristics of bipolar transistors using a two-dimensional model , 1976 .

[17]  H.-M. Rein,et al.  Analytical current-voltage relations for compact SiGe HBT models. I. The "idealized" HBT , 1999 .

[18]  J. Slotboom,et al.  Non-local impact ionization in silicon devices , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[19]  Hans-Martin Rein,et al.  Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s , 1996, IEEE J. Solid State Circuits.

[20]  H.-M. Rein.  Erratum: Improving the large-signal models of bipolar transistors by dividing the intrinsic base into two lateral sections , 1977 .