论文信息 - Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors

Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors

We demonstrate a short-cavity edge-emitting 0.98-/spl mu/m GaAs-based laser with semiconductor/air distributed Bragg reflector (DBR) mirrors made by reactive ion etching (RIE). The dc and small-signal modulation properties of 100-/spl mu/m-long lasers have been measured and are characterized by I/sub th/=4.5 mA and f/sub -3dB/=30 GHz under pulsed conditions, respectively. The far-field pattern of light emanating from the DBR is also measured.

[1] Kenichi Iga,et al. A Novel Short-Cavity Laser with Deep-Grating Distributed Bragg Reflectors , 1996 .

[2] R. Jambunathan,et al. Design studies for distributed Bragg reflectors for short-cavity edge-emitting lasers , 1997 .

[3] Characteristics of a two‐component chemically‐assisted ion‐beam etching technique for dry‐etching of high‐speed multiple quantum well laser mirrors , 1995 .

[4] Kam Y. Lau,et al. High‐speed digital modulation of ultralow threshold (<1 mA) GaAs single quantum well lasers without bias , 1987 .

[5] R. Nagarajan,et al. Transport limits in high-speed quantum-well lasers: experiment and theory , 1992, IEEE Photonics Technology Letters.

[6] Xiangkun Zhang,et al. Tunneling injection lasers: a new class of lasers with reduced hot carrier effects , 1996 .

[7] J. Fleissner,et al. Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers , 1996, IEEE Photonics Technology Letters.

[8] R. Olshansky,et al. Frequency response of 1.3µm InGaAsP high speed semiconductor lasers , 1987 .