THIN-FILM TRANSISTOR MODELING
暂无分享,去创建一个
[1] M. Liang,et al. Narrow width effects of bottom-gate polysilicon thin film transistors , 1998, IEEE Electron Device Letters.
[2] N. Cheung,et al. Application of plasma immersion ion implantation doping to low-temperature processed poly-Si TFTs , 1998, IEEE Electron Device Letters.
[3] J. Baumbach,et al. Hybrid organic/inorganic complementary circuits , 1996 .
[4] Luisa Torsi,et al. AN ANALYTICAL MODEL FOR SHORT-CHANNEL ORGANIC THIN-FILM TRANSISTORS , 1995 .
[5] Chul-Hi Han,et al. Improved stability of short-channel hydrogenated N-channel polycrystalline silicon thin-film transistors with very thin ECR N 2 O-plasma gate oxide , 1998 .
[6] John A. Rogers,et al. Organic smart pixels , 1998 .
[7] E. Narayanan,et al. Turn-on characteristics of polycrystalline silicon TFT's-impact of hydrogenation and channel length , 1999, IEEE Electron Device Letters.
[8] Gilles Horowitz,et al. Role of the semiconductor/insulator interface in the characteristics of π-conjugated-oligomer-based thin-film transistors , 1992 .
[10] Luisa Torsi,et al. Schottky diodes and field-effect transistors based on conjugated thiophenes , 1998 .
[11] Trond Ytterdal,et al. A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects , 1999 .
[12] D. Mensa,et al. Submicron transferred-substrate heterojunction bipolar transistors , 1999, IEEE Electron Device Letters.
[13] T. Sigmon,et al. High-performance laser-processed polysilicon thin-film transistors , 1999, IEEE Electron Device Letters.
[14] Michael S. Shur,et al. A new analytic model for amorphous silicon thin‐film transistors , 1989 .
[15] B. Faughnan. Subthreshold model of a polycrystalline silicon thin‐film field‐effect transistor , 1987 .
[16] Lewis J. Rothberg,et al. Electrically active organic and polymeric materials for thin-film-transistor technologies , 1996 .
[17] Francis Garnier,et al. Vertical device architecture by molding of organic-based thin film transistor , 1998 .
[18] T. A. Fjeldly,et al. A new charge conserving capacitance model for GaAs MESFET's , 1997 .
[19] C.G. Sodini,et al. The effect of high fields on MOS device and circuit performance , 1984, IEEE Transactions on Electron Devices.
[20] Tsu-Jae King,et al. A comparison of hydrogen and deuterium plasma treatment effects on polysilicon TFT performance and dc reliability , 1999, IEEE Electron Device Letters.
[21] Tor A. Fjeldly,et al. Unified model for short-channel poly-Si TFTs , 1999 .
[22] F. Garnier. Scope and limits of organic–based thin–film transistors , 1997, Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences.
[23] Gilles Horowitz,et al. An analytical model for organic‐based thin‐film transistors , 1991 .
[24] M. Matsumura,et al. Short-channel amorphous-silicon thin-film transistors , 1996 .
[25] Trond Ytterdal,et al. SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors , 1997 .
[26] Michael S. Shur,et al. Physics of amorphous silicon based alloy field‐effect transistors , 1984 .
[27] S. M. Fluxman,et al. Design and performance of digital polysilicon thin-film-transistor circuits on glass , 1994 .
[28] Won Kyu Kwak,et al. A novel coplanar amorphous silicon thin-film transistor using silicide layers , 1999 .