Performance Enhancement of Plasmonic Sub-Terahertz Detector Based on Antenna Integrated Low-Impedance Silicon MOSFET

We demonstrate the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and report the experimental results of Si MOSFET impedance in THz regime using 0.2-THz measurement system. By designing FET with low-impedance ranges (<;1 kΩ) and integrating antennas with impedances of 50 and 100 Ω, we found that our low-impedance MOSFETs have the input impedance criterion of 50 Ω at 0.2 THz and the MOSFETs with thinner gate oxide show the highly enhanced plasmonic photoresponses at 50-Ω antenna by 325 times from the result of the detector without antenna.

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