Polymer memory device based on conjugated polymer and gold nanoparticles

Electrical bistability is demonstrated in a polymer memory device with an active layer consisting of conjugated poly3-hexylthiophene and gold nanoparticles capped with 1-dodecanethiol sandwiched between two metal electrodes. The device was fabricated through a simple solution processing technique and exhibited a remarkable electrical bistable behavior. Above a threshold voltage the pristine device, which was in a low conductivity state, exhibited an increase in conductivity by more than three orders of magnitude. The device could be returned to the low conductivity state by applying a voltage in the reverse direction. The electronic transition is attributed to an electric-field-induced charge transfer between the two components in the system. The conduction mechanism changed from a charge-injection-controlled current in the low conductivity state to a charge-transport-controlled current in the high conductivity state. In the high conductivity state the conduction was dominated by a field-enhanced thermal excitation of trapped charges at room temperature, while it is dominated by charge tunneling at low temperatures. The device exhibited excellent stability in both the conductivity states and could be cycled between the two states for numerous times. The device exhibits tremendous potential for its application as fast, stable, low-cost, high storage density nonvolatile electronic memory. © 2006 American Institute of Physics. DOI: 10.1063/1.2337252

[1]  R. N. Marks,et al.  Light-emitting diodes based on conjugated polymers , 1990, Nature.

[2]  Marc D. Porter,et al.  Alkanethiolate Gold Cluster Molecules with Core Diameters from 1.5 to 5.2 nm: Core and Monolayer Properties as a Function of Core Size , 1998 .

[3]  Yang Yang,et al.  Highly efficient green polymer light‐emitting diodes through interface engineering , 2005 .

[4]  E. H. Rhoderick,et al.  Metal–Semiconductor Contacts , 1979 .

[5]  Yang Yang,et al.  Organic Donor–Acceptor System Exhibiting Electrical Bistability for Use in Memory Devices , 2005, Advanced materials.

[6]  Charles R. Szmanda,et al.  Programmable polymer thin film and non-volatile memory device , 2004, Nature materials.

[7]  Luisa D. Bozano,et al.  Mechanism for bistability in organic memory elements , 2004 .

[8]  A. J. Heeger,et al.  Photoinduced Electron Transfer from a Conducting Polymer to Buckminsterfullerene , 1992, Science.

[9]  Mark A. Reed,et al.  Mechanism of electron conduction in self-assembled alkanethiol monolayer devices , 2003 .

[10]  Design and Synthesis of New Polymeric Materials for Organic Nonvolatile Electrical Bistable Storage Devices: Poly(biphenylmethylene)s , 2005 .

[11]  Yang Yang,et al.  Polyaniline nanofiber/gold nanoparticle nonvolatile memory. , 2005, Nano letters.

[12]  Vladimir Dyakonov,et al.  Current limiting mechanisms in indium-tin-oxide'poly3-hexylthiophene' aluminum thin film devices , 2003 .

[13]  I. A. Hümmelgen,et al.  Charge injection and transport in electrochemical films of poly(3-hexylthiophene) , 2002 .

[14]  R. Murray,et al.  Gold nanoelectrodes of varied size: transition to molecule-like charging , 1998, Science.

[15]  Wolfgang Brütting,et al.  Device physics of organic light-emitting diodes based on molecular materials , 2001 .

[16]  Liping Ma,et al.  Unique architecture and concept for high-performance organic transistors , 2004 .

[17]  J. Frenkel,et al.  On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors , 1938 .

[18]  Stephen R. Forrest,et al.  The dawn of organic electronics , 2000 .

[19]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[20]  Liping Ma,et al.  Single-band Hubbard model for the transport properties in bistable organic/metal nanoparticle/organic devices , 2004 .

[21]  Liping Ma,et al.  Organic electrical bistable devices and rewritable memory cells , 2002 .