Low-voltage semiconductor topology for kV pulse generation using a leakage flux corrected step-up transformer

This paper introduces a new circuit to obtain high voltage (kV) pulsed power supplies suitable for plasma ion implantation. Using a step-up transformer with a leakage flux reduction winding, and taking advantage of the low duty ratio required, 800 V semiconductor switches can be used to obtain 5 kV 10 kHz pulses. Theoretical and experimental results are presented.