Impact of thermal boundary conductances on power dissipation and electrical breakdown of carbon nanotube network transistors

estimate the average CNT-SiO2 TBC as g � 0.16Wm � 1 K � 1 and the TBC at CNT junctions as GC � 2.4 pWK � 1 . We find the peak power dissipation in CN-TFTs is more strongly correlated to the TBC of the CNT-substrate interface than to the TBC at CNT junctions. Molecular dynamics simulations of crossed CNT junctions also reveal that the top CNT is buckled over � 30nm lengths, losing direct contact with the substrate and creating highly localized hot-spots. Our results provide new insights into CNT network properties which can be engineered to enhance performance of CN-TFTs for macro and flexible electronics applications. V C 2012 American

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