论文信息 - Monolithic integration of a low threshold current quantum well laser and a driver circuit on a GaAs substrate

Monolithic integration of a low threshold current quantum well laser and a driver circuit on a GaAs substrate

An AlGaAs/GaAs graded‐index waveguide separate‐confinement heterostructure (GRIN SCH) laser and a laser driver circuit composed of four GaAs metal‐semiconductor field‐effect transistors have been monolithically integrated on a semi‐insulating GaAs substrate. By introducing the GRIN SCH single quantum well (6 nm thick) structure, the integrated laser has exhibited room‐temperature cw operation characteristics with an extremely low threshold current of 15 mA as well as a high quantum efficiency of 50%. Measurements have also shown the conversion ratio of laser output power to input gate voltage of 4.3 mW/V, and the turn‐on and turn‐off times of the light output of 400 and 900 ps, respectively, demonstrating high sensitivity and fast response performance of the present monolithic laser/driver.

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