이종접합 쇼트키 다이오드의 임피던스 특성을 이용한 가스센서에 관한 연구

AlGaN/GaN devices have received a considerable amount of attention in relation to high-power applications due to their wide band gap properties. To achieve control of the leakage current using a cap layer addition, various surface treatment methods and results were discussed. However, the influence of different capping layers on material properties and transistor performance has not been investigated so far. We investigated the effects of various capping layers, such as n-GaN and u-GaN formed on AlGaN/GaN Schottky diodes, on the performance of devices using TLM and AFM analysis. Also we studied impedance changes of schottky diodes by injecting gases with diverse concentrations.