Matching simulation and experiment for chemically amplified resists

In this paper, the method for tuning a lithography simulator to match simulation to experiment, proposed by Thornton and Mack, was extended to a chemically amplified deep-UV resist process. After performing the Thornton-Mack tuning, the post-exposure bake (PEB) parameters of the resist were adjusted in the simulator to mach experimental results. In particular, measurements of Eo versus time and temperature of the PEB were used to 'calibrate' the actual PEB hotplate to the simulated hotplate and to estimate the amount of base quencher in the resist. Once tuned, the simulator was used to predict CD performance and compared to experimental results.