Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs

Characteristic 1.54 μm Er3+ emission has been observed from Er-implanted and annealed, low-temperature grown GaAs Be doped and undoped samples. Er plateau implantations (480, 155, and 40 keV successive implants) were performed at 300 °C covering calculated Er concentrations from 1018 up to 1020 Er/cm3. Cross-sectional transmission electron microscopy studies reveal very little structural damage for these elevated temperature implants up to an Er total fluence of 1.36×1014 Er/cm2. No Er emission was observed from any of the as-implanted samples but it was observed after postimplantation annealings at 650 and 750 °C temperatures. The Er emission was significantly more intense after 650 °C anneals, for Be doped samples, and after 750 °C anneals for undoped samples. It appears on top of a broad background luminescence associated with midgap states. The Er emission intensity was found to scale linearly with the total Er implantation fluence up to Er concentration of ∼1019 Er/cm3. Er precipitation was observed ...

[1]  J. Ziegler,et al.  stopping and range of ions in solids , 1985 .

[2]  F. Smith.  Device Applications of Low-Temperature-Grown GaAs , 1991 .

[3]  Y. Kido,et al.  Structural analysis of erbium sheet‐doped GaAs grown by molecular‐beam epitaxy, with ion channeling followed by Monte Carlo simulation , 1995 .

[4]  Y. Horikoshi,et al.  Atomic configuration of the Er‐O luminescence center in Er‐doped GaAs with oxygen codoping , 1994 .

[5]  H. Nakagome,et al.  Growth of erbium-doped GaAs and InP by metalorganic chemical vapor deposition using Er(CH3C5H4)3 and Er(C5H5)3 , 1988 .

[6]  J. Nakata,et al.  Direct evidence of Er atoms occupying an interstitial site in metalorganic chemical vapor deposition-grown GaAs:Er , 1992 .

[7]  Elisabeth Bauser,et al.  Incorporation of erbium in GaAs by liquid-phase epitaxy , 1987 .

[8]  P. Klein,et al.  Photoluminescence and magnetic resonance studies of Er3+ in MeV ion‐implanted GaAs , 1991 .

[9]  Anthony R. Peaker,et al.  Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs , 1992 .

[10]  P. Specht,et al.  Transmission electron microscopy and photoluminescence studies of Er implanted low-temperature grown GaAs:Be , 1998 .

[11]  Michio Tajima,et al.  Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence Spectroscopy , 1982 .

[12]  Lattice location of erbium implanted into GaAs , 1991 .

[13]  M. Tajima.  Radiative Recombination Mechanism of EL2 Level in GaAs , 1987 .

[14]  K. Evans,et al.  Erbium complexes and defect levels in MBE-grown erbium-doped GaAs and AlGaAs , 1993 .

[15]  W. Haydl,et al.  Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP , 1986 .

[16]  A. Polman,et al.  Erbium implanted thin film photonic materials , 1997 .

[17]  P. Wennekers,et al.  Erbium doping of molecular beam epitaxial GaAs , 1987 .