论文信息 - A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model

A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model

An analytical model for the electric characteristics of ultrathin double-gate and surrounding-gate MOSFETs in strong inversion and accumulation is presented. The analytical solutions to the 1-D simplified Poisson’s equation in both Cartesian and cylindrical coordinates with symmetric boundary conditions are examined. The concentration of the induced inversion charge by the same surface potential is found significantly higher in the surrounding-gate MOSFET, which indicates its better gate control and achievable higher current. Finally, the full 1-D Poisson’s equation is numerically solved and compared with the analytical solution of the simplified equation, and an excellent agreement between them is found.

Y. Chen | J. Luo | Y Chen | J Luo

[1] P. Chambré. On the Solution of the Poisson‐Boltzmann Equation with Application to the Theory of Thermal Explosions , 1952 .

[2] J. Hauser,et al. Approximations for accumulation and inversion space-charge layers in semiconductors , 1968 .

[3] F. Balestra,et al. Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance , 1987, IEEE Electron Device Letters.

[4] Fumio Horiguchi,et al. Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's , 1991 .

[5] Jean Brini,et al. Deep depleted SOI MOSFETs with back potential control: A numerical simulation , 1985 .

[6] C. Hu,et al. A comparative study of advanced MOSFET concepts , 1996 .

[7] J. Colinge,et al. Silicon-on-insulator 'gate-all-around device' , 1990, International Technical Digest on Electron Devices.

[8] Chenming Hu,et al. Sub 50-nm FinFET: PMOS , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[9] D. Monroe,et al. Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs , 2000, IEEE Electron Device Letters.

[10] Stanley Wolf,et al. The submicron mosfet , 1995 .

[11] D. Flandre,et al. Modeling of ultrathin double-gate nMOS/SOI transistors , 1994 .

[12] Y. Taur. An analytical solution to a double-gate MOSFET with undoped body , 2000 .