论文信息 - Noise and Interface Density of Traps in 4 H‐SiC MOSFETs - 字舞流文

Noise and Interface Density of Traps in 4 H‐SiC MOSFETs

M. Shur | A. Agarwal | S. Ryu | B. Hull | J. Palmour | M. Levinshtein | S. Rumyantsev | P. Ivanov