Gain chip design, power scaling and intra-cavity frequency doubling with LBO of optically pumped red-emitting AlGaInP-VECSELs

The wide range of applications in biophotonics, television or projectors, spectroscopy and lithography made the optically-pumped semiconductor (OPS) vertical external cavity surface-emitting lasers (VECSELs) an important category of power scalable lasers. The possibility of bandgap engineering, inserting frequency selective and converting elements into the open laser cavity and laser emission in the fundamental Gaussian mode leads to ongoing growth of the area of applications for tuneable laser sources. We present an AlGaInP-VECSEL system with a multi quantum well structure consisting of compressively strained GaInP quantum wells in an AlxGa1-xInP separate confinement heterostructure with an emission wavelength around 665 nm. The VECSEL chip with its n-λ cavity is pumped by a 532nm Nd:YAG laser under an angle to the normal incidence of 50°. In comparison, a gain chip design for high absorption values at pump wavelengths around 640nm with the use of quantum dot layers as active material is also presented. Frequency doubling is now realized with an antireflection coated lithium borate crystal, while a birefringent filter, placed inside the laser cavity under Brewster's angle, is used for frequency tuning. Further, power-scaling methods like in-well pumping as well as embedding the active region of a VECSEL between two transparent ic heaspreaders are under investigation.

[1]  Joachim Wagner,et al.  Resonant optical in-well pumping of an (AlGaIn)(AsSb)-based vertical-external-cavity surface-emitting laser emitting at 2.35μm , 2007 .

[2]  Roman Bek,et al.  Comparison of AlGaInP-VECSEL gain structures , 2015 .

[3]  M. Kuznetsov,et al.  High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams , 1997, IEEE Photonics Technology Letters.

[4]  Günter Steinmeyer,et al.  Mode-locked VECSEL emitting 5 ps pulses at 675 nm. , 2013, Optics letters.

[5]  Zhou Yang,et al.  Optically pumped DBR-free semiconductor disk lasers. , 2015, Optics express.

[6]  Adolf Giesen,et al.  Scalable concept for diode-pumped high-power solid-state lasers , 1994 .

[7]  Michael Jetter,et al.  Wavelength tunable ultraviolet laser emission via intra-cavity frequency doubling of an AlGaInP vertical external-cavity surface-emitting laser down to 328 nm , 2011 .

[8]  Markus Pessa,et al.  High Power, Continuous Wave Operation of a Vertical External Cavity Surface Emitting Laser at 674nm , 2005 .

[9]  Alexei Sirbu,et al.  3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser. , 2010, Optics express.

[10]  David Pabœuf,et al.  Frequency stabilization of an ultraviolet semiconductor disk laser. , 2013, Optics letters.

[11]  David Paboeuf,et al.  Continuous-wave semiconductor disk laser emitting at 224 nm via intracavity frequency tripling , 2015 .

[12]  Thomas Graf,et al.  2.5 W continuous wave output at 665 nm from a multipass and quantum-well-pumped AlGaInP vertical-external-cavity surface-emitting laser. , 2016, Optics letters.

[13]  Leszek Frasunkiewicz,et al.  Vertical-Cavity Surface-Emitting Lasers , 2017 .

[14]  Tomasz Czyszanowski,et al.  Double-diamond high-contrast-gratings vertical external cavity surface emitting laser , 2014 .

[15]  Tomasz Czyszanowski,et al.  Simulation of 1550-nm diamond VECSEL with high contrast grating , 2012, Photonics Europe.

[16]  P. Michler,et al.  High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W , 2013 .

[17]  M. Dawson,et al.  Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser , 2006 .

[18]  Alexander R. Albrecht,et al.  DBR-free optically pumped semiconductor disk lasers , 2015, Photonics West - Lasers and Applications in Science and Engineering.

[19]  P. Michler,et al.  Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power , 2011 .

[20]  Roman Bek,et al.  Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses , 2013 .

[21]  Michael Jetter,et al.  Frequency doubled AlGaInP-VECSEL with high output power at 331 nm and a large wavelength tuning range in the UV , 2012, Photonics Europe.

[22]  Roman Bek,et al.  High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL , 2014 .

[23]  G. Boyd,et al.  Parametric Interaction of Focused Gaussian Light Beams , 1968 .

[24]  Roman Bek,et al.  Intra-cavity frequency-doubled mode-locked semiconductor disk laser at 325 nm. , 2015, Optics express.

[25]  Adolf Giesen,et al.  Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm , 2002, SPIE OPTO.

[26]  T. Graf,et al.  Enhanced efficiency of AlGaInP disk laser by in-well pumping. , 2015, Optics express.

[27]  Michael Jetter,et al.  Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs , 2013 .