论文信息 - Growth and Surface Reconstructions of AlN(0001) Films

Growth and Surface Reconstructions of AlN(0001) Films

The growth and surface reconstructions of AlN(0001) films were studied. For moderately Alrich surfaces, the 2×6 structure is commonly observed in reflection high energy electron diffraction. It is found that this pattern consists of 2√3×2√3-R30° and 5√3×5√3-R30° reconstructions according to scanning tunneling microscopy. Similar to the Ga-rich GaN(0001) surface, these structures are determined to contain 2−3 monolayers of excess Al terminating the surface. Based on first-principles theory the structures are believed to contain a laterally contracted Al layer. At higher Al coverage a thick, flat Al film is found to form on the surface. A high density of growth spirals (associated with threading dislocations having full or partial screw character) is found to be present on the surface, although this density decreases with increasing growth temperature.

[1] A. Barbier,et al. Growth of aluminum nitride on (111) silicon: Microstructure and interface structure , 1998 .

[2] R. Felice,et al. Atomic structure and stability of AIN(0001) and (0001) surfaces , 1997 .

[3] D. Greve,et al. Reconstructions of the GaN\(0001̄\) Surface , 1997 .

[4] Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching , 2002 .

[5] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.

[6] R. Davis,et al. Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction , 1998 .

[7] B. Schröter,et al. The polarity of AlN films grown on Si(1 1 1) , 1999 .

[8] Andrew G. Glen,et al. APPL , 2001 .

[9] C. T. Foxon,et al. Surface reconstruction patterns of AlN grown by molecular beam epitaxy on sapphire , 2001 .

[10] W. Hösler,et al. Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy , 2003 .

[11] W. C. Hughes,et al. Molecular beam epitaxy growth and properties of GaN, AlxGa1−xN, and AlN on GaN/SiC substrates , 1996 .

[12] Eric Sven Hellman,et al. The Polarity of GaN: a Critical Review , 1998 .

[13] W. Richter,et al. Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy , 1999 .