论文信息 - DX center electron occupancy under hydrostatic pressure in Si‐doped Iny(Ga1−xAlx)1−yAs alloys - 字舞流文

DX center electron occupancy under hydrostatic pressure in Si‐doped Iny(Ga1−xAlx)1−yAs alloys

P. Rockett | E. Calleja | R. Grey | A. Powell | E. Muñoz | A. L. Romero | P. Claxton | F. Garcia