论文信息 - New double charge-pumping circuit for high-voltage generation

New double charge-pumping circuit for high-voltage generation

We have proposed a double charge-pumping circuit composed of PMOS transistors. The circuit does not suffer from the threshold voltage loss of the PMOS transistors. Therefore, the circuit can generate a high voltage which is proportional to the number of pumping stages. Computer simulation was applied to a 24-stage circuit. As a result, the output voltage of the circuit was as high as +20 V under the condition of V/sub DD/=+ 1 V.

[1] J. F. Dickson,et al. On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique , 1976 .

[2] T. Tanzawa,et al. A dynamic analysis of the Dickson charge pump circuit , 1997, IEEE J. Solid State Circuits.