Simulation technique for ACLR of a class‐S power amplifier with a delta‐sigma modulator

A simulation technique for an adjacent channel leakage ratio (ACLR) of a class-S power amplifier (PA) with a delta-sigma modulator is proposed. This technique is based on three basic points. The first is a proper baseband signal, which must provide a fairly better ACLR than the target value of a PA as well as a tolerable total amount of time that can be handled by a transient circuit simulation. The second point is a carrier frequency adjustment for the observations free from spectrum leakage distortion due to a limited total amount of simulated time. The last is an ACLR calculation using only a steady-state output. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:462–465, 2014

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