Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor

Ultra-thin oxides (<100 A) have been grown on strained Si/Si1−xGex/Si layers at a low temperature using microwave O2- and NO-plasma. Metal-oxide-semiconductor (MOS) capacitors fabricated using these oxides have been used for the determination of the hole density in the Si-cap and the Si0.8Ge0.2-channel. The valence band discontinuity (ΔEv) at the Si/Si0.8Ge0.2 heterointerface has been extracted from the carrier confinement characteristics of the quantum well. Capacitance–voltage (C–V) profiling has been used to measure the apparent doping profile and thickness of the unconsumed Si-cap layer. Fowler–Nordheim (F–N) constant current stressing shows that NO-plasma grown oxides have an improved charge trapping behavior over the O2-plasma grown oxides.

[1]  C. Maiti,et al.  ELECTRICAL PROPERTIES OF OXIDES GROWN ON STRAINED SIGE LAYER AT LOW TEMPERATURES IN A MICROWAVE OXYGEN PLASMA , 1994 .

[2]  Judy L. Hoyt,et al.  Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors , 1989 .

[3]  Semi-analytical model for charge control in SiGe quantum well MOS structures , 1993 .

[4]  E. Yang,et al.  Effects of Ge concentration on SiGe oxidation behavior , 1991 .

[5]  C. Maiti,et al.  PROPERTIES OF SIGE OXIDES GROWN IN A MICROWAVE OXYGEN PLASMA , 1995 .

[6]  R. People,et al.  Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substrates , 1986 .

[7]  C. Salama,et al.  New technique for the characterization of Si/SiGe layers using heterostructure MOS capacitors , 1994 .

[8]  B. Meyerson,et al.  SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing , 1994, IEEE Electron Device Letters.

[9]  D. Harame,et al.  SiGe-channel heterojunction p-MOSFET's , 1994 .

[10]  P. Garone,et al.  Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures , 1991, IEEE Electron Device Letters.

[11]  Martin,et al.  Theoretical calculations of heterojunction discontinuities in the Si/Ge system. , 1986, Physical review. B, Condensed matter.

[12]  Chih-Tang Sah,et al.  Models and experiments on degradation of oxidized silicon , 1987 .

[13]  Analytical modeling of threshold voltages in p-channel Si/SiGe/Si MOS structures , 1993 .

[14]  A. Peaker,et al.  The determination of valence band discontinuities in Si/Si1−xGex/Si heterojunctions by capacitance‐voltage techniques , 1993 .

[15]  O. Nur,et al.  Short-channel effects in Si/Si1−xGex retrograde double quantum well p-MOSFETs , 1999 .

[16]  I. S. Goh,et al.  Electrical properties of plasma-grown oxide on MBE-grown SiGe , 1995 .

[17]  P. Hohenberg,et al.  Inhomogeneous Electron Gas , 1964 .

[18]  P. Solomon,et al.  A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices , 1991, IEEE Electron Device Letters.

[19]  U. Konig,et al.  SiGe HBTs and HFETs , 1995 .

[20]  B. Meyerson,et al.  Two‐dimensional hole gas in Si/Si0.85Ge0.15/Si modulation‐doped double heterostructures , 1989 .

[21]  R. People,et al.  Physics and applications of Ge x Si 1-x /Si strained-layer heterostructures , 1986 .

[22]  S. Iyer,et al.  Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma , 1992 .

[23]  R. Apetz,et al.  Si1-xGex/Si valence band offset determination using current voltage characteristics , 1997 .

[24]  C. K. Maiti,et al.  Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate , 1992 .

[25]  Judy L. Hoyt,et al.  Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures , 1992 .

[26]  C. Sodini,et al.  Si/Si/sub 1-x/Ge/sub x/ valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure , 1994 .

[27]  Ni,et al.  Band offsets in pseudomorphically grown Si/Si1-xGex heterostructures studied with core-level x-ray photoelectron spectroscopy. , 1990, Physical review. B, Condensed matter.

[28]  Shinichi Takagi,et al.  Evaluation of the valence band discontinuity of Si/Si/sub 1-x/Ge/sub x//Si heterostructures by application of admittance spectroscopy to MOS capacitors , 1998 .

[29]  Ni,et al.  New method to study band offsets applied to strained Si/Si1-xGex(100) heterojunction interfaces. , 1987, Physical review. B, Condensed matter.

[30]  R. Martin,et al.  Theoretical study of Si/Ge interfaces , 1985 .

[31]  K.P. MacWilliams,et al.  Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS , 1991, IEEE Electron Device Letters.

[32]  H. Lüth,et al.  Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy , 1993 .

[33]  F. d'Heurle,et al.  Diffusion versus oxidation rates in silicon‐germanium alloys , 1991 .

[34]  C. Maiti,et al.  Ultrathin oxides using N2O on strained Si1−xGex layers , 1996 .

[35]  Bernard S. Meyerson,et al.  Heterojunction bipolar transistors using Si-Ge alloys , 1989 .

[36]  Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1−xGex for MOS applications , 1999 .