The cryogenic readout system with GaAs JFETs for multi-pixel cameras

Our purpose is to realize a multi-pixel sub-millimeter/terahertz camera with the superconductor - insulator - superconductor photon detectors. These detectors must be cooled below 1 K. Since these detectors have high impedance, signal amplifiers of each pixel must be setting aside of them for precise signal readout. Therefore, it is desirable that the readout system work well even in cryogenic temperature. We selected the n-type GaAs JFETs as cryogenic circuit elements. From our previous studies, the n-type GaAs JFETs have good cryogenic properties even when those power dissipations are low. We have designed several kinds of integration circuits (ICs) and demonstrated their performance at cryogenic temperature. Contents of ICs are following; AC coupled trans-impedance amplifiers, voltage distributors for suppressing input offset voltage of AC coupled CTIAs, multiplexers with sample-and holds, and shift-registers for controlling multiplex timing. The power dissipation of each circuit is 0.5 to 3 micro watts per channel. We also have designed and manufactured 32-channel multi-chip-modules with these ICs. These modules can make 32- channel input photo current signals into one or two serial output voltage signal(s). Size of these is 40mm x 30mm x 2mm and estimated total power dissipation is around 400 micro watts.

[1]  Hirokazu Ikeda,et al.  Development of cryogenic analog amplifiers based on GaAs‐JFET technology for high impedance array sensors , 2009 .

[2]  H. Matsuo,et al.  Optical reduction of low frequency noise in cryogenic GaAs junction field effect transistor , 2008 .

[3]  Chiko Otani,et al.  Performance of SIS photon detectors for superconductive imaging submillimeter-wave camera (SISCAM) , 2006, SPIE Astronomical Telescopes + Instrumentation.

[4]  Y. Hibi,et al.  The cryogenic multiplexer and shift register for submillimeter-wave digital camera , 2009 .

[5]  Y. Hibi,et al.  GaAs cryogenic readout electronics for high impedance detector arrays for far-infrared and submillimeter wavelength region , 2009 .

[6]  M. Fujiwara,et al.  Performance of GaAs JFET at a cryogenic temperature for application to readout circuit of high-impedance detectors , 2004, IEEE Transactions on Electron Devices.

[7]  C. Otani,et al.  Terahertz imaging with a direct detector based on superconducting tunnel junctions , 2006 .

[8]  Hirokazu Ikeda,et al.  Fabrication of Cryogenic Readout Circuits with n-type GaAs-JFETs for Low Temperature Detectors , 2008 .

[9]  Chiko Otani,et al.  Development of superconductive imaging submillimeter-wave camera with nine detector elements (SISCAM-9) , 2006, SPIE Astronomical Telescopes + Instrumentation.

[10]  Chiko Otani,et al.  Realization of Submillimeter-Wave Imaging Array with Superconducting Direct Detectors , 2008 .

[11]  Mikio Fujiwara,et al.  Progress on GaAs cryogenic readout circuits for SISCAM , 2006, SPIE Astronomical Telescopes + Instrumentation.

[12]  Jonas Zmuidzinas,et al.  Superconducting detectors and mixers for millimeter and submillimeter astrophysics , 2004, Proceedings of the IEEE.

[13]  H. Shibai,et al.  Cryogenic capacitive transimpedance amplifier for astronomical infrared detectors , 2004, IEEE Transactions on Electron Devices.

[14]  Hirokazu Ikeda,et al.  The Cryogenic Digital Readout Module with GaAs JFET ICs , 2009 .

[15]  A. Endo,et al.  Contribution of the imaginary part of the superconducting gap energy on the SIS tunneling current , 2009 .

[16]  H. Matsuo,et al.  Optical control of low frequency noise behavior in cryogenic GaAs junction field effect transistor , 2009 .

[17]  Hirokazu Ikeda,et al.  SISCAM 32-ch cryogenic readout module with GaAs-JFET ASICs , 2010, Astronomical Telescopes + Instrumentation.

[18]  Noguchi Takashi,et al.  Origin of subgap current in an SIS junction , 2009 .

[19]  M. Fujiwara,et al.  Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature , 2002 .