Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode

Abstract Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I – V and C – V characteristics. I – V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.

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