Comparison of forming gas effects on the ferroelectric properties between more-oriented and less-oriented Pb(Zr0.52Ti0.48)O3 thin films

More-oriented and less-oriented Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited by using a pulsed-laser deposition method on a Pt∕Ti∕SiO2∕Si substrate with (Pb0.72La0.28)Ti0.93O3 buffer and on a Pt∕Ti∕SiO2∕Si substrate without buffer, respectively, which were observed by x-ray diffraction patterns. These films were annealed in H2-contained ambient for 30 min at the substrate temperature of 400 °C to evaluate the forming gas annealing effects. The comparative studies on the ferroelectric properties of these two films were carried out that showed that ferroelectric properties such as remanent polarization did not change in the case of the more-oriented PZT film, whereas the remanent polarization value of the less-oriented lead zirconate titanate (PZT) film degraded from 20.8 to 7.3μC∕cm2. The leakage current became higher in both cases, but that of the more-oriented PZT film had the moderate value of the 10−6 order of A∕cm2. This is mainly because the hydrogen atoms that cause the degradation of PZT film...

[1]  Jin-Ping Han,et al.  Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 thin films , 1997 .

[2]  Y. Goto,et al.  Interface between electrode and PZT memory device , 2000 .

[3]  Sang Yeol Lee,et al.  Effect of laser fluence on the ferroelectric properties of pulsed laser deposited (Pb1−xLax)Ti1−x/4O3 thin films , 2003 .

[4]  B. S. Kang,et al.  Lanthanum-substituted bismuth titanate for use in non-volatile memories , 1999, Nature.

[5]  V. Joshi,et al.  Sub-100 nm SrBi2Ta2O9 film with ultrathin BiTaO4 capping layer for 3 V or lower-voltage ferroelectric memory operation , 2002 .

[6]  C. Kim,et al.  Enhancement of the ferroelectric properties of Pb(Zr0.53Ti0.47)O3 thin films fabricated by laser ablation , 2004 .

[7]  C. W. Tipton,et al.  EFFECT OF HYDROGEN ON PB(ZR, TI)O3-BASED FERROELECTRIC CAPACITORS , 1998 .

[8]  S. Joo,et al.  Role of grain boundaries on hydrogen-induced degradation in lead zirconate titanate thin films , 2002 .

[9]  S. Han,et al.  Phase formation and ferroelectricity of sol-gel derived (Pb, La)TiO3 thin films , 1998 .

[10]  Yoshihisa Fujisaki,et al.  Electrode‐induced degradation of Pb(ZrxTi1−x)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin‐film capacitors , 1996 .

[11]  T. Tamura,et al.  Hysteresis variations of (Pb, La)(Zr, Ti)O3 capacitors baked in a hydrogen atmosphere , 1999 .

[12]  A. Kingon,et al.  Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors , 1999 .

[13]  C. J. Kerr,et al.  Recovery of forming gas damaged Pb(Nb, Zr, Ti)O3 capacitors , 2000 .

[14]  M. C. Scott,et al.  Fatigue-free ferroelectric capacitors with platinum electrodes , 1995, Nature.

[15]  Yasuhiro Shimamoto,et al.  H2 DAMAGE OF FERROELECTRIC PB(ZR,TI)O3 THIN-FILM CAPACITORS : THE ROLE OF CATALYTIC AND ADSORPTIVE ACTIVITY OF THE TOP ELECTRODE , 1997 .