论文信息 - Neutron-induced noise in junction field-effect transistors

Neutron-induced noise in junction field-effect transistors

A modified depletion-layer generation-recombination (g-r) noise theory is given for defects with energy levels away from the middle of the band gap. Measurements are presented on JFET's irradiated with neutrons. The g-r noise spectra of these indicate that five distinct defects are introduced; the results are explained with the modified theory.

E. R. Chenette | A. van der Ziel | K.K. Wang | E. Chenette

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