论文信息 - Lasing wavelengths of index-guided AlGaInP semiconductor lasers as functions of off-angle from [100] plane of GaAs substrate

Lasing wavelengths of index-guided AlGaInP semiconductor lasers as functions of off-angle from [100] plane of GaAs substrate

The lasing wavelengths of AIGalnP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650nm as the off-angle increases to 10–15°. The influence of the off-angle on the laser transverse mode is also discussed.

[1] T. Kajimura,et al. Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch-stop layer , 1989 .

[2] M. Ikeda,et al. GaInP/AlGaInP double-heterostructure laser grown on a (111)B-oriented GaAs substrate by metalorganic chemical vapour deposition , 1988 .