Debye temperature of erbium-doped yttrium aluminum garnet from luminescence and Brillouin scattering data

Erbium-doped yttrium aluminum garnet (YAG) has been investigated by Brillouin scattering and photoluminescence (PL) spectroscopy in wide temperature (77–500 K) and erbium concentration (0.1%–50%) ranges. A characteristic temperature Θ, connected to the Debye temperature, has been evaluated by two different methods: from the thermal shifts and broadening of PL spectral lines, and from the elastic constants, estimated by Brillouin scattering. Both methods show that the Debye temperature weakly depends on the doping level (up to 50 at.%) of the erbium ions. This means that YAG is an ideal host for erbium ions; this result is relevant for application of rare earth elements in YAG crystal in the fields of telecommunications and optical devices.

[1]  D. Hall,et al.  Room-temperature 1.5 μm photoluminescence of Er3+-doped AlxGa1−xAs native oxides , 1998 .

[2]  A. Polman,et al.  Erbium implanted thin film photonic materials , 1997 .

[3]  A. Schawlow,et al.  Temperature Dependence of the Width and Position of the 2 E--> 4 A 2 Fluorescence Lines of Cr 3+ and V 2+ in MgO , 1964 .

[4]  E. M. Lifshitz,et al.  Course in Theoretical Physics , 2013 .

[5]  B. Judd,et al.  Optical Spectra of Transparent Rare Earth Compounds , 1978 .

[6]  Manuel Cardona,et al.  Light Scattering in Solids , 2000 .

[7]  T. Kushida Linewidths and Thermal Shifts of Spectral Lines in Neodymium-Doped Yttrium Aluminum Garnet and Calcium Fluorophosphate , 1969 .

[8]  A. Kaminskiĭ,et al.  Crystalline Lasers: Physical Processes and Operating Schemes , 1996 .

[9]  J. C. Wright Up-conversion and excited state energy transfer in rare-earth doped materials , 1976 .

[10]  B. Tanner,et al.  Combined surface Brillouin scattering and x-ray reflectivity characterization of thin metallic films , 1997 .

[11]  Allan D. Pierce,et al.  Physical acoustics : principles and methods , 1965 .

[12]  J. G. Solé,et al.  Growth and second harmonic generation characterization of Er3+ doped bulk periodically poled LiNbO3 , 1998 .

[13]  D. Mccumber,et al.  Linewidth and Temperature Shift of the R Lines in Ruby , 1963 .

[14]  A. Lacaita,et al.  Direct evidence of impact excitation and spatial profiling of excited Er in light emitting Si diodes , 1998 .

[15]  W. C. Scott,et al.  Phonon-induced relaxation in excited optical states of trivalent praseodymium in laf sub 3. , 1964 .

[16]  A. Zanatta,et al.  Green photoluminescence from Er-containing amorphous SiN thin films , 1998 .

[17]  Andrew J. Steckl,et al.  Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy , 1998 .

[18]  F. Horst,et al.  Design of 1480-nm diode-pumped Er3+-doped integrated optical amplifiers , 1994 .

[19]  G. Alers Use of Sound Velocity Measurements in Determining the Debye Temperature of Solids , 1965 .

[20]  Prokhorov,et al.  Many-body energy-transfer processes between Er3+ ions in yttrium aluminum garnet. , 1990, Physical review. B, Condensed matter.