The importance of in-die sampling using E-beam solution on yield improvement Yu Zhanga, Biqiu Liua, Cong Zhanga, Yuyang Biana, Song Gaoa, Yifei Zhua, Xiaobo Guoa, Jun Huanga, Yaniv Abramovitzb , Qiang Zhoub, Uri Smolyanb, Omri Baumb, Amit Zakayb, Rohit Kumar Singhb (a) Shanghai Huali Integrated Circuit Manufacturing Corporation, Pudong New District, Shanghai, China; (b) PDC business group, Applied Materials, Rehovot, Israel As technology progress with scaling to meet the market requirements, the patterning characterization of dense features suffers a significant challenge for current optic tools, and measurement accuracy will be an important index and great challenge as well. Patterning can mostly be characterized with index of overlay measurement. When you break down the budget of the overlay error, one of the challenges is a gap between measurement results in scribe and device, which provide improper information to be used in correction or process anomaly (excursion) detection, resulting in a low yield at the end of the production process. An eBeam tool, using high electron landing energies while utilizing the Elluminator technology for improvement backscattered electrons (BSE) imaging efficiency, can be utilized to directly capture OVL performance of device unit in die, including local and global level, due to BSE function of eBeam tool. In this paper, we demonstrate overlay measurement of M0 to Poly line in device for advanced logic node, obtaining measurement gap between Overlay in-die and scribe line to capture the actual behavior of device unit in die. Massive overlay data measured by optical and eBeam tool with have been analyzed in detail. Keywords: Overlay, eBeam, yield, CDSEM, accuracy, in-die,