Enabling a compact model to simulate the RF behavior of MOSFETs in SPICE

A detailed methodology for implementing a MOSFET model valid to perform RF simulations is described in this article. Since the SPICE-like simulation programs are used as a standard tool for integrated circuit (IC) design, the resulting model is oriented for its application under the SPICE environment. The core of the proposed model is the popular BSIM3v3, but in this model the RF effects are taken into account by means of extrinsic lumped elements. Good agreement between the simulated and measured small-signal S-parameter data is achieved for a 0.18-μm channel-length MOSFET, thus validating the proposed model. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE 15, 2005.

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