A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique

Two different protection diodes are investigated with electrothermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses are studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and space distribution of temperature is obtained up to 1100 K.

[1]  M. Rudan,et al.  Extraction Method for the Impact-Ionization Multiplication Factor in Silicon at Large Operating Temperatures , 2002, 32nd European Solid-State Device Research Conference.

[2]  A. Amerasekera,et al.  Electrothermal behavior of deep submicron nMOS transistors under high current snapback (ESD/EOS) conditions , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[3]  Kartikeya Mayaram,et al.  Self-heating effects in basic semiconductor structures , 1993 .

[4]  G. Groos,et al.  Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures , 2005, IEEE Transactions on Electron Devices.

[5]  Dionyz Pogany,et al.  Simulation and experimental study of temperature distribution during ESD stress in smart-power technology ESD protection structures , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

[6]  V. Dubec,et al.  Thermal distribution during destructive pulses in ESD protection devices using a single-shot two-dimensional interferometric method , 2003 .

[7]  M. Rudan,et al.  Investigation about the high-temperature impact-ionization coefficient in silicon , 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

[8]  V. Dubec,et al.  Single-shot thermal energy mapping of semiconductor devices with the nanosecond resolution using holographic interferometry , 2002, IEEE Electron Device Letters.

[9]  Massimo Rudan,et al.  Impact-ionization in silicon at large operating temperature , 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

[10]  Sergey Bychikhin,et al.  Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry , 2002 .

[11]  G. Groos,et al.  Experimental extraction of the electron impact-ionization coefficient at large operating temperatures , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..