Read method of non volatile memory device

A read method of a non-volatile memory device is provided to prevent read disturbance phenomenon during read operation of the non-volatile memory device. Bit lines are discharged to have a low level(T1). A read voltage or a pass voltage is applied to a word line connected to a memory cell(T2). A bit line connected to a specific cell to be read is precharged to have a high level(T3). Voltage level of the bit line is evaluated. Data stored in the specific cell is sensed according to the voltage level of the evaluated bit line(T4).