Growth and characterization of InGaN blue LED structure on Si(1 1 1) by MOCVD

Abstract High-performance InGaN blue light-emitting diodes (LEDs) on Si(1 1 1) substrates were fabricated by metalorganic chemical vapor deposition. Crack-free films were obtained using Ga-rich GaN high-temperature buffer. The full-width at half-maximum (FWHM) of the (0 0 2) X-ray rocking curve and the (1 0 2) X-ray rocking curve were 343 and 520 arcsec, respectively, which indicate that the LED wafer on Si is of high crystalline quality. The operating voltage of 3.8 V, turn-on voltage about 2.5 V and series resistance of 47 Ω were obtained for the LED. The electroluminescence peaks at 460 nm with a FWHM about 28 nm at 20 mA current. In addition, the LED shows an EL intensity of 20 mcd at an injection current of 20 mA. These characteristics are comparable to those of LED on sapphire.

[1]  James S. Speck,et al.  Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films , 1996 .

[2]  James H. Edgar,et al.  Substrates for gallium nitride epitaxy , 2002 .

[3]  H. Amano,et al.  Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer , 1986 .

[4]  Supratik Guha,et al.  Ultraviolet and violet GaN light emitting diodes on silicon , 1998 .

[5]  E. Kohn,et al.  MOVPE growth of GaN on Si(1 1 1) substrates , 2003 .

[6]  E. Feltin,et al.  Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy , 2001 .

[7]  Michael Heuken,et al.  Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness , 2000 .

[8]  Pierre Gibart,et al.  Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy , 2001 .

[9]  M. Umeno,et al.  High‐Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer , 1999 .

[10]  J. Massies,et al.  GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment , 1999 .

[11]  Henryk Temkin,et al.  HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA , 1999 .

[12]  Takashi Jimbo,et al.  High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer , 2003 .

[13]  Armin Dadgar,et al.  Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers , 2003 .

[14]  Armin Dadgar,et al.  Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking , 2002 .

[15]  Yoshio Honda,et al.  Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy , 2002 .

[16]  A. Lunev,et al.  Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates , 2000 .

[17]  Kenji Uchida,et al.  Control of Initial Nucleation by Reducing the V/III Ratio during the Early Stages of GaN Growth , 2000 .

[18]  J. Bläsing,et al.  Reduction of stress at the initial stages of GaN growth on Si(111) , 2003 .

[19]  Robert F. Karlicek,et al.  Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy , 1999 .