OEIC research in Korea

This paper presents a chronological overview of Korean activities in optoelectronics and optoelectronic integrated circuits (OEICs) undertaken mainly in university laboratories. OEIC transmitters and receivers for communications and semiconductor laser logic devices for optical switching and computing are briefly described.

[1]  M. Ito,et al.  Monolithic integration of a metal—semiconductor—metal photodiode and a GaAs preamplifier , 1984, IEEE Electron Device Letters.

[2]  K. Oh,et al.  An InGaAs/InP p-i-n-JFET OEIC with a wing-shaped p/sup +/-InP layer , 1992, IEEE Photonics Technology Letters.

[3]  Ichiro Ogura,et al.  Surface‐emitting laser operation in vertical‐to‐surface transmission electrophotonic devices with a vertical cavity , 1991 .

[4]  B. Tell,et al.  Active optical NOR logic devices using surface-emitting lasers , 1992, IEEE Photonics Technology Letters.

[5]  B. Tell,et al.  Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers , 1991, IEEE Photonics Technology Letters.

[6]  C. Chae,et al.  GaAs/AlGaAs rooftop reflector laser for optoelectronic integrated circuits , 1987 .

[7]  G. R. Olbright,et al.  Cascadable laser logic devices: discrete integration of phototransistors with surface-emitting laser diodes , 1991 .

[8]  Hyo-Hoon Park,et al.  Low threshold current density InGaAs surface-emitting lasers with periodic gain active structure , 1994 .

[9]  生駒 俊明.  Very high speed integrated circuits : heterostructure , 1990 .

[10]  Y. Nakano,et al.  1.3 µm buried-heterostructure lasers on p-type InP substrates , 1985, IEEE Journal of Quantum Electronics.

[11]  Jack L. Jewell,et al.  Room-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser Diodes , 1989 .

[12]  G. A. Vawter,et al.  Inverting and latching optical logic gates based on the integration of vertical-cavity surface-emitting lasers and photothyristors , 1992, IEEE Photonics Technology Letters.

[13]  N. Bar-chaim,et al.  GaAs integrated optoelectronics , 1982, IEEE Transactions on Electron Devices.

[14]  A. Yariv,et al.  Integration of an injection laser with a Gunn oscillator on a semi‐insulating GaAs substrate , 1978 .

[15]  A. Scherer,et al.  Monolithic arrays of surface emitting laser NOR logic devices , 1993, IEEE Photonics Technology Letters.

[16]  J. P. Harbison,et al.  Low threshold electrically pumped vertical cavity surface emitting microlasers , 1989, Annual Meeting Optical Society of America.

[17]  Suntak Park,et al.  Symmetric self‐electro‐optic effect device array grown by metalorganic vapor phase epitaxy using GaAs/Al0.04Ga0.96As shallow quantum wells , 1993 .

[18]  Osamu Wada,et al.  Recent progress in optoelectric integrated circuits (OEIC's) , 1986 .

[19]  K. Jang,et al.  DC and AC characteristics of AL/sub 0.25/Ga/sub 0.75/As/GaAs quantum-well delta-doped channel FET grown by LP-MOCVD , 1992, IEEE Electron Device Letters.

[20]  S. Kang,et al.  A MODFET-based optoelectronic integrated circuit receiver for optical interconnects , 1993 .