AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range
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Kai Cheng | Robert Mertens | Gustaaf Borghs | Pawel E. Malinowski | Jean Yves Duboz | Anne Lorenz | Joff Derluyn | Marianne Germain | Joachim John | Fabrice Semond | A. BenMoussa | Patricia Aparicio Alonso | J.-F. Hochedez
[1] P. Malinowski,et al. AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range , 2007, SPIE Optics + Optoelectronics.
[2] Gustaaf Borghs,et al. Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer , 2005 .
[3] H. Morkoç,et al. GaN, AlN, and InN: A review , 1992 .
[4] Pierre Gibart,et al. Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet , 2004 .
[5] Hadis Morkoç,et al. Nitride Semiconductors and Devices , 1999 .
[6] Anthony J. Peacock,et al. New UV detectors for solar observations , 2003, SPIE Astronomical Telescopes + Instrumentation.
[7] Jean-Paul Kleider,et al. Development of imaging arrays for solar UV observations based on wide band gap materials , 2004, SPIE Optics + Photonics.
[8] Gustaaf Borghs,et al. Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers , 2006 .
[9] Nicolas Grandjean,et al. Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation , 2002 .
[10] Gustaaf Borghs,et al. ITON Schottky contacts for GaN based UV photodetectors , 2006 .
[11] Chris Van Hoof,et al. High-density hybrid interconnect methodologies , 2004 .
[12] Emanuele Pace,et al. Wide bandgap EUV and VUV imagers for the Solar Orbiter , 2001 .