论文信息 - Monolithic Ge/Si avalanche photodiode receiver for 10Gb/s 1.3μm application - 字舞流文

Monolithic Ge/Si avalanche photodiode receiver for 10Gb/s 1.3μm application

We have developed monolithically grown Ge/Si avalanche photodiodes (APDs) for high data rate and near infrared wavelength fiber communication systems. The surface illuminated APDs demonstrate gain-bandwidth of 153 GHz.

A. Pauchard | A. Beling | J. Bowers | M. Zadka | J. Campbell | M.J. Paniccia | Y. Kang | S. Litski | G. Sarid | M. Morse | Y.-H. Kuo | H.-D. Liu | D.C. McIntosh

[1] A. Knights,et al. Silicon Photonics: An Introduction , 2004 .

[2] Joe C. Campbell,et al. 21-GHz-Bandwidth Germanium-on-Silicon Photodiode Using Thin SiGe Buffer Layers , 2006, IEEE Journal of Selected Topics in Quantum Electronics.

[3] Nahum Izhaky,et al. High-speed optical modulation based on carrier depletion in a silicon waveguide. , 2007, Optics express.

[4] Qianfan Xu,et al. 12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators. , 2007, Optics express.

[5] Lorenzo Pavesi,et al. Optical interconnects : the silicon approach , 2006 .

[6] O. Dosunmu,et al. Performance of Ge-on-Si p-i-n Photodetectors for Standard Receiver Modules , 2006 .

[7] M. Paniccia,et al. A continuous-wave Raman silicon laser , 2005, Nature.