论文信息 - A Continuous Model for MOSFET VT Matching Considering Additional Length Effects

A Continuous Model for MOSFET VT Matching Considering Additional Length Effects

MOS transistor threshold voltage matching is usually modeled proportionally to reverse square root of gate area. Yet this model is not satisfactory when discontinuities are observed. In this paper, a continuous matching model with only two parameters is given. It is obtained by analyzing impact of short channel effects on matching degradation.

K. Rochereau | A. Cathignol | S. Bordez

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