Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography
暂无分享,去创建一个
Koji Inoue | Bin Han | Yasuyoshi Nagai | Sylvie Schamm-Chardon | Yasuo Shimizu | M. Perego | Y. Shimizu | G. Seguini | S. Schamm-Chardon | C. Castro | Y. Nagai | Gabriele Seguini | Elisa Arduca | Celia Castro | Gerard Ben Assayag | Michele Perego | G. Assayag | E. Arduca | B. Han | K. Inoue
[1] M. Zacharias,et al. Si nanocrystal based memories: Effect of the nanocrystal density , 2006 .
[2] T. Gregorkiewicz,et al. Direct generation of multiple excitons in adjacent silicon nanocrystals revealed by induced absorption , 2012, Nature Photonics.
[3] Baptiste Gault,et al. Reconstructing atom probe data: a review. , 2013, Ultramicroscopy.
[4] Di Liang,et al. Recent progress in lasers on silicon , 2010 .
[5] Panagiotis Dimitrakis,et al. Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation , 2004 .
[6] Sandip Tiwari,et al. A silicon nanocrystals based memory , 1996 .
[7] S. Lombardo,et al. Observation of the nucleation kinetics of Si quantum dots on SiO2 by energy filtered transmission electron microscopy , 2003 .
[8] Brian P. Gorman,et al. Atom Probe Tomography of Electronic Materials , 2007 .
[9] T. Mikolajick,et al. Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide , 2013 .
[10] R. Walters,et al. Field-effect electroluminescence in silicon nanocrystals , 2005, Nature materials.
[11] M. Perego,et al. Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method. , 2014, Nanoscale.
[12] M. Zacharias,et al. Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography , 2014 .
[13] N. Cherkashin,et al. Imaging Si nanoparticles embedded in SiO(2) layers by (S)TEM-EELS. , 2008, Ultramicroscopy.
[14] S. Ringer,et al. Quantitative atom probe analysis of nanostructure containing clusters and precipitates with multiple length scales. , 2011, Ultramicroscopy.
[15] Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO2 thin films , 2006 .
[16] L. Kourkoutis,et al. Three-dimensional imaging for precise structural control of Si quantum dot networks for all-Si solar cells. , 2013, Nanoscale.
[17] D. Seidman,et al. Best-fit ellipsoids of atom-probe tomographic data to study coalescence of γ′ (L12) precipitates in Ni–Al–Cr , 2007, cond-mat/0703452.
[18] Stephen Y. Chou,et al. A Silicon Single-Electron Transistor Memory Operating at Room Temperature , 1997, Science.
[19] J. Heitmann,et al. Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach , 2002 .
[20] F. Gourbilleau,et al. Phase transformation in SiOx/SiO₂ multilayers for optoelectronics and microelectronics applications. , 2013, Ultramicroscopy.
[21] M. Roussel,et al. Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis , 2013 .
[22] A. Pérez‐Rodríguez,et al. Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2 , 2002 .
[23] M. Perego,et al. Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon , 2013 .
[24] Size and location control of Si nanocrystals at ion beam synthesis in thin SiO2 films , 2002, cond-mat/0208137.
[25] M. Ueda,et al. Focused ion beam direct deposition and its applications , 1998 .
[26] David J. Larson,et al. Atom Probe Tomography 2012 , 2012 .
[27] A. Nishida,et al. Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography , 2015 .
[28] G. Hwang,et al. On the origin of Si nanocrystal formation in a Si suboxide matrix , 2007 .
[29] D. Muller,et al. Three-dimensional imaging of nonspherical silicon nanoparticles embedded in silicon oxide by plasmon tomography , 2006 .
[30] J. Leburton,et al. Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation , 2005 .
[31] K. Wilford,et al. A sensitivity analysis of the maximum separation method for the characterisation of solute clusters. , 2011, Ultramicroscopy.
[32] Chang-Hee Cho,et al. Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3 , 2006 .
[33] F. Gourbilleau,et al. Confined phase separation in SiOx nanometric thin layers , 2013 .
[34] A. Nishida,et al. Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography , 2013 .
[35] Fabio Iacona,et al. Correlation between luminescence and structural properties of Si nanocrystals , 2000 .
[36] Sang Kyun Kim,et al. Strong size-dependent characteristics of carrier injection in quantum-confined silicon nanocrystals , 2009 .
[37] E A Kenik,et al. Atom Probe Tomography: A Technique for Nanoscale Characterization , 2004, Microscopy and Microanalysis.
[38] Michael P Moody,et al. New Techniques for the Analysis of Fine-Scaled Clustering Phenomena within Atom Probe Tomography (APT) Data , 2007, Microscopy and Microanalysis.
[39] Naoki Yokoyama,et al. MICROSTRUCTURE AND OPTICAL ABSORPTION PROPERTIES OF SI NANOCRYSTALS FABRICATED WITH LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION , 1996 .
[40] F. Gourbilleau,et al. Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography , 2011, Nanoscale research letters.
[41] M. Perego,et al. Silicon crystallization in nanodot arrays organized by block copolymer lithography , 2014, Journal of Nanoparticle Research.
[42] A Membrane Device for Substrate‐Free Photovoltaic Characterization of Quantum Dot Based p‐i‐n Solar Cells , 2012, Advanced materials.
[43] Orsay,et al. Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology , 2004, cond-mat/0407329.