Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3
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F. Ren | S. Pearton | B. Gila | Soohwan Jang | A. Kuramata | D. Hays | Patrick H. CareyIV
[1] F. Ren,et al. Band alignment of Al 2 O 3 with ( 201 ) bGa 2 O 3 , 2017 .
[2] F. Ren,et al. Valence and conduction band offsets in AZO/Ga2O3 heterostructures , 2017 .
[3] F. Ren,et al. Energy band offsets of dielectrics on InGaZnO4 , 2017 .
[4] Akito Kuramata,et al. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes , 2017 .
[5] F. Ren,et al. Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1−xOy on InGaZnO4 , 2017 .
[6] Kevin D. Leedy,et al. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage , 2016 .
[7] Akito Kuramata,et al. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth , 2016 .
[8] Juan Xu,et al. Effect of Surface Defect States on Valence Band and Charge Separation and Transfer Efficiency , 2016, Scientific Reports.
[9] Jihyun Kim,et al. Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics. , 2016, Physical chemistry chemical physics : PCCP.
[10] Zbigniew Galazka,et al. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs , 2016, IEEE Electron Device Letters.
[11] M. Caricato,et al. Multi-state extrapolation of UV/Vis absorption spectra with QM/QM hybrid methods. , 2016, The Journal of chemical physics.
[12] S. Yamakoshi,et al. Large conduction band offset at SiO2/β‐Ga2O3 heterojunction determined by X‐ray photoelectron spectroscopy , 2016 .
[13] S. Yamakoshi,et al. Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy , 2016 .
[14] S. Dhar,et al. Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes , 2016 .
[15] Akito Kuramata,et al. Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V , 2016, IEEE Electron Device Letters.
[16] Sean W. King,et al. Defect-induced bandgap narrowing in low-k dielectrics , 2015 .
[17] C. G. Van de Walle,et al. Brillouin zone and band structure of β‐Ga2O3 , 2015 .
[18] A. Klein. Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy , 2015, Journal of physics. Condensed matter : an Institute of Physics journal.
[19] J. Robertson,et al. High-K materials and metal gates for CMOS applications , 2015 .
[20] S. Yamakoshi,et al. Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions , 2014 .
[21] Akito Kuramata,et al. Development of gallium oxide power devices , 2014 .
[22] Akito Kuramata,et al. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics , 2013 .
[23] Tohru Honda,et al. Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals , 2013 .
[24] Jae Cheol Lee,et al. Reflection electron energy loss spectroscopy for ultrathin gate oxide materials , 2012 .
[25] Joel B. Varley,et al. Oxygen vacancies and donor impurities in β-Ga2O3 , 2010 .
[26] A. Klein,et al. Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides—from hole to electron injection , 2010 .
[27] G. Leusink,et al. Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy , 2010 .
[28] Jisheng Pan,et al. Impact of oxide defects on band offset at GeO2/Ge interface , 2009 .
[29] Roberto Orlando,et al. First-principles study of the structural, electronic, and optical properties of Ga 2 O 3 in its monoclinic and hexagonal phases , 2006 .
[30] J. Spence. Absorption spectroscopy with sub-angstrom beams: ELS in STEM , 2006 .
[31] Z. Wang,et al. Reflection electron energy‐loss spectroscopy and imaging for surface studies in transmission electron microscopes , 1992, Microscopy research and technique.
[32] E. A. Kraut,et al. Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy , 1983 .
[33] E. A. Kraut,et al. Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials , 1980 .
[34] Steffen Ganschow,et al. Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method , 2017 .
[35] Andreas Fiedler,et al. Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates , 2017 .
[36] David I. Shahin,et al. Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) β-Ga2O3 , 2017 .
[37] Gwangseok Yang,et al. Electrical Characteristics of Vertical Ni/β-Ga2O3 Schottky Barrier Diodes at High Temperatures , 2017 .
[38] David I. Shahin,et al. Thermionic Emission Analysis of TiN and Pt Schottky Contacts to β-Ga2O3 , 2017 .
[39] F. Ren,et al. Valence and Conduction Band Offsets in Sputtered LaAlO3/InGaZnO4 Heterostructures , 2016 .
[40] K. Hobart,et al. Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric , 2016 .