In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures

A physical simulation procedure was used to describe the processes behind the operation of devices based on TiN/Ti/HfO2/W structures. The equations describing the creation and destruction of conductive filaments formed by oxygen vacancies are solved in addition to the heat equation. The resistances connected with the metal electrodes were also considered. Resistive random access memories analyzed were fabricated, and many of the characteristics of the experimental data were reproduced with accuracy. Truncated-cone shaped filaments were employed in the model developed with metallic-like transport characteristics. A hopping current was also taken into account to describe the electron transport between the filament tip and the electrode. Hopping current is an essential component in the device high resistance state.

[1]  Jae Hyuck Jang,et al.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.

[2]  Shimeng Yu,et al.  Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[3]  M. Lanza.  A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope , 2014, Materials.

[4]  Jordi Suñé,et al.  Simulation of thermal reset transitions in resistive switching memories including quantum effects , 2014 .

[5]  Shimeng Yu,et al.  A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations , 2012, IEEE Electron Device Letters.

[6]  Lin Chen,et al.  Device and SPICE modeling of RRAM devices. , 2011, Nanoscale.

[7]  Jae Sung Lee,et al.  Resistive switching phenomena: A review of statistical physics approaches , 2015 .

[8]  C. Muller,et al.  Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories , 2011 .

[9]  T. Cabout,et al.  Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories , 2014, IEEE Transactions on Electron Devices.

[10]  Jordi Suñé,et al.  An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs , 2015 .

[11]  S. Balatti,et al.  Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling , 2012, IEEE Transactions on Electron Devices.

[12]  Yukio Hayakawa,et al.  An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput , 2012, IEEE Journal of Solid-State Circuits.

[13]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[14]  Masahide Matsumoto,et al.  A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology , 2014, IEEE Journal of Solid-State Circuits.

[15]  Francisco Jimenez-Molinos,et al.  A SPICE Compact Model for Unipolar RRAM Reset Process Analysis , 2015, IEEE Transactions on Electron Devices.

[16]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[17]  R. Waser.  Redox-based resistive switching memories. , 2012, Journal of nanoscience and nanotechnology.

[18]  Jordi Suñé,et al.  A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach , 2016 .

[19]  S. Long,et al.  An in-depth simulation study of thermal reset transitions in resistive switching memories , 2013 .

[20]  F. Zeng,et al.  Recent progress in resistive random access memories: Materials, switching mechanisms, and performance , 2014 .

[21]  B. Gao,et al.  A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations , 2013, IEEE Transactions on Electron Devices.