Two-step As-desorption from (001) InP observed by surface photoabsorption

The investigation of As desorption from the (001) InP during metalorganic chemical vapor deposition was performed using surface photoabsorption (SPA). The behavior of the monochromatic SPA signal showed a clear existence of a metastable state after the AsH3 was turned off. SPA spectra at each stable surface were taken to confirm the interpretation. This result indicates that the previous criterion to measure the amount of As/P exchange reaction is not necessarily correct and that the As-desorption process should be understood as a two-step process.

[1]  E. Yoon,et al.  Possibility of Two-Step As-Desorption from (001) InP Using Surface Photoabsorption , 2001 .

[2]  S. Visbeck,et al.  Reflectance difference spectroscopy of mixed phases of indium phosphide (001) , 2001 .

[3]  E. Yoon,et al.  Analysis of P adsorption and desorption on the (001) InP surface using surface photoabsorption , 1999 .

[4]  G. B. Stringfellow,et al.  Surface photoabsorption transients and ordering in GaInP , 1998 .

[5]  E. Yoon,et al.  Monolayer epitaxy of GaAs at 650 °C by metal–organic chemical‐vapor deposition with surface photoabsorption monitoring , 1996 .

[6]  N. Kobayashi.  In-situ monitoring and control of surface processes in metalorganic vapor phase epitaxy by surface photo-absorption , 1994 .

[7]  N. Kobayashi,et al.  In situ monitoring and control of atomic layer epitaxy by surface photo-absorption , 1993 .

[8]  Kamiya,et al.  Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum. , 1992, Physical review. B, Condensed matter.

[9]  Y. Kobayashi,et al.  In Situ Control of Heterointerface Quality in MOVPE by Surface Photo-Absorption , 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

[10]  N. Kobayashi,et al.  As and P Desorption from III-V Semiconductor Surface in Metalorganic Chemical Vapor Deposition Studied by Surface Photo-Absorption , 1991 .

[11]  Flórez,et al.  Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001). , 1987, Physical review letters.