Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}
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[1] K. Sabelfeld,et al. Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1) , 2016, 1611.06895.
[2] E. Yakimov. What is the real value of diffusion length in GaN , 2015 .
[3] C. Fressengeas,et al. A field theory of piezoelectric media containing dislocations , 2014 .
[4] A. Tagantsev,et al. Fundamentals of flexoelectricity in solids , 2013, Nanotechnology.
[5] D. Vanderbilt,et al. First-principles theory and calculation of flexoelectricity , 2013, 1307.0132.
[6] M. Willatzen,et al. Electromechanical phenomena in semiconductor nanostructures , 2011 .
[7] E. Yakimov. Comment on “Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence” [Appl. Phys. Lett. 89, 161905 (2006)] , 2010 .
[8] R. Maranganti,et al. Atomistic determination of flexoelectric properties of crystalline dielectrics , 2009, 0903.0684.
[9] Naoki Yamamoto,et al. Low temperature diffusion length of excitons in gallium nitride measured by cathodoluminescence technique , 2008 .
[10] K. Thonke,et al. Polarization fields of III-nitrides grown in different crystal orientations , 2007, Journal of physics. Condensed matter : an Institute of Physics journal.
[11] Dominique Drouin,et al. CASINO V2.42: a fast and easy-to-use modeling tool for scanning electron microscopy and microanalysis users. , 2007, Scanning.
[12] S. Zaitsev,et al. EBIC measurements of small diffusion length in semiconductor structures , 2007 .
[13] V. Alshits,et al. Chapter 72 Dislocation Fields in Piezoelectrics , 2007 .
[14] Andrei Schliwa,et al. Interrelation of structural and electronic properties in InxGa1-xN/GaN quantum dots using an eight-band k · p model , 2006, cond-mat/0610462.
[15] Dominique Drouin,et al. Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence , 2006 .
[16] V. Grillo,et al. Contrast analysis of dislocation images in TEM–cathodoluminescence technique , 2005 .
[17] A. Authier,et al. Physical properties of crystals , 2007 .
[18] A. Usikov,et al. High-resolution electron-beam-induced-current study of the defect structure in GaN epilayers , 2002 .
[19] J. Speck. The Role of Threading Dislocations in the Physical Properties of GaN and its Alloys , 1999 .
[20] E. Yu,et al. Piezoelectric polarization associated with dislocations in wurtzite GaN , 1999 .
[21] Satoshi Kurai,et al. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN , 1998 .
[22] E. C. Carr,et al. CORRELATION OF CATHODOLUMINESCENCE INHOMOGENEITY WITH MICROSTRUCTURAL DEFECTS IN EPITAXIAL GAN GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION , 1997 .
[23] Izabella Grzegory,et al. Elastic constants of gallium nitride , 1996 .
[24] J. Lothe,et al. Elastic Strain Fields and Dislocation Mobility , 1992 .
[25] K. Shintani. Screened potential of a charged dislocation in piezoelectric semiconductors , 1991 .
[26] J. Banavar,et al. Low-temperature field ionization of localized impurity levels in semiconductors , 1979 .
[27] T. Yamabe,et al. Theory of the ionization of the hydrogen atom by an external electrostatic field , 1977 .
[28] G. Faivre,et al. Dislocations in Piezoelectric Semiconductors , 1972 .
[29] L. Merten. Abgeschirmte piezoelektrische Potentiale um Versetzungen in piezoelektrischen Kristallen , 1966 .
[30] E. Yoffe. A dislocation at a free surface , 1961 .