Epitaxial growth of β-SiC on Si (100) by low energy ion beam deposition
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[1] S. T. Lee,et al. Epitaxial growth of β–SiC on silicon by bias-assisted hot filament chemical vapor deposition from solid graphite and silicon sources , 1998 .
[2] J. Lindner,et al. Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis , 1996 .
[3] A. Romano-Rodríguez,et al. ION-BEAM SYNTHESIS OF AMORPHOUS SIC FILMS : STRUCTURAL ANALYSIS AND RECRYSTALLIZATION , 1996 .
[4] K. L. Tan,et al. Argon incorporation and silicon carbide formation during low energy argon‐ion bombardment of Si(100) , 1996 .
[5] Wolfgang Skorupa,et al. Amorphization and recrystallization of 6H‐SiC by ion‐beam irradiation , 1995 .
[6] E. Logothetis,et al. Preparation of oriented silicon carbide films by laser ablation of ceramic silicon carbide targets , 1991 .
[7] W. J. Choyke,et al. Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers , 1990 .
[8] Herbert A. Will,et al. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices , 1983 .
[9] D. Newbury,et al. Self-diffusion of silicon-30 in α-SiC single crystals , 1981 .
[10] S. T. Picraux,et al. FORMATION OF SiC IN SILICON BY ION IMPLANTATION , 1971 .