Electrical behavior of an octahedral layered OL-1-type manganese oxide material

OL-1-type material (birnessite) is synthesized by an oxidoreduction process. Different physicochemical techniques were used to characterize the obtained material. AC impedance spectroscopy results show processes associated to the electrical conduction in bulk and grain boundary at high frequency, and an ionic conduction at low frequency. Here σ′(ω) shows a universal Jonscher’s law behavior associated to the electron hopping and charge polarization, and the value of 8.39 × 10−6 Ω−1 cm−1 found in the high frequency region at room temperature suggests its semiconductor nature. The combined results of AOS, TGA, and AA suggest the following chemical formula $$ {\text{N}}{{\text{a}}^{ + }}_{{0.28}}\left( {{\text{M}}{{\text{g}}^{{2 + }}}_{{0.16}}{\text{M}}{{\text{n}}^{{4 + }}}_{{0.46}}{\text{M}}{{\text{n}}^{{3 + }}}_{{0.54}}} \right){{\text{O}}_{{2.03}}} \cdot 0.6{{\text{H}}_2}{\text{O}} $$. Finally, the XRD pattern is characteristic of OL-1-type materials, the BET area was 56,25 m2 g−1, and the behavior of N2 isotherms suggests the presence of microporous and mesoporous structures. With the purpose of obtaining a better understanding of the ionic conductivity in these types of materials, magnesium exchange material was prepared and electrical properties at room temperature were analyzed. These results indicate that there is interplay among the structural, morphological, and textural properties with the electrical performance of these materials.