Role of charge particles irradiation on the deposition of AlN films using plasma focus device

[1]  R. Rawat,et al.  Synthesis of nano-crystalline zirconium aluminium oxynitride (ZrAlON) composite films by dense plasma Focus device , 2009 .

[2]  R. Rawat,et al.  Nitridation of zirconium using energetic ions from plasma focus device , 2008 .

[3]  R. Rawat,et al.  SYNTHESIS OF ZIRCONIUM OXYNITRIDE (ZrON) NANOCOMPOSITE FILMS ON ZIRCONIUM SUBSTRATE BY DENSE PLASMA FOCUS DEVICE , 2008 .

[4]  T. L. Tan,et al.  FePt nanoparticle formation with lower phase transition temperature by single shot plasma focus ion irradiation , 2008 .

[5]  M. Shih,et al.  Deposition of aluminum nitride thin film on Si(1 1 1) by KrF excimer laser and its characterizations , 2008 .

[6]  D. Altamura,et al.  Fabrication of AlN/Si SAW delay lines with very low RF signal noise , 2007 .

[7]  T. L. Tan,et al.  Optimization of a plasma focus device as an electron beam source for thin film deposition , 2007 .

[8]  G. Murtaza,et al.  Nitriding of titanium by using an ion beam delivered by a plasma focus , 2007 .

[9]  Junsin Yi,et al.  Effect of rapid thermal annealing of sputtered aluminium nitride film in an oxygen ambient , 2006 .

[10]  H. Chuaqui,et al.  Experimental studies of ion beam anisotropy in a low energy plasma focus operating with methane , 2006 .

[11]  Enrique Iborra,et al.  Piezoelectric actuation of microbridges using AlN , 2005 .

[12]  H. Chuaqui,et al.  Ion beam emission in a low energy plasma focus device operating with methane , 2005 .

[13]  O. Salas,et al.  Production of AlN films: ion nitriding versus PVD coating , 2004 .

[14]  H. Maciel,et al.  High textured AlN thin films grown by RF magnetron sputtering; composition, structure, morphology and hardness , 2004 .

[15]  C. Thompson,et al.  Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1) , 2004 .

[16]  M. P. Srivastava,et al.  Carbon ion implantation on titanium for TiC formation using a dense plasma focus device , 2004 .

[17]  R. Rawat,et al.  Effect of energetic ion irradiation on CdI2 films , 2004 .

[18]  I. Kitamura,et al.  Purity of nitrogen ion beams produced in a plasma focus , 2003 .

[19]  Hiroshi Takahashi,et al.  Growth of AlN on lattice-matched MnO substrates by pulsed laser deposition , 2003 .

[20]  G. Murtaza,et al.  Study of Lateral Spread of Ions Emitted from 2.3 kJ Plasma Focus with Hydrogen and Nitrogen Gases , 2002 .

[21]  Hiroshi Takahashi,et al.  Growth of epitaxial AlN films on (Mn,Zn)Fe2O4 substrates by pulsed laser deposition , 2002 .

[22]  Armin Dadgar,et al.  Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking , 2002 .

[23]  M. M. Wong,et al.  Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganic chemical vapour deposition , 2002 .

[24]  James Kolodzey,et al.  The electrical properties of MIS capacitors with ALN gate dielectrics , 2001 .

[25]  T. White,et al.  Room temperature deposition of titanium carbide thin films using dense plasma focus device , 2001 .

[26]  F. Kokai,et al.  Effect of Laser Wavelength for Surface Morphology of Aluminum Nitride Thin Films by Nitrogen Radical-Assisted Pulsed Laser Deposition , 2001 .

[27]  J. Ziman.  Electrons and Phonons: The Theory of Transport Phenomena in Solids , 2001 .

[28]  E. Suh,et al.  Characterization of GaN thin film growth on 3C-SiC/Si(111) substrate using various buffer layers , 2001 .

[29]  Y. Lam,et al.  Effect of argon ion irradiation on Sb2Te3 films in a dense plasma focus device , 2000 .

[30]  S. Prawer,et al.  Micro-Raman scattering properties of highly oriented AlN films , 1998 .

[31]  Jiayou Feng,et al.  Low temperature growth of reactive partially ionized beam deposited AlN films , 1997 .

[32]  J. Feugeas,et al.  The thermal evolution of targets under plasma focus pulsed ion implantation , 1997 .

[33]  M. P. Srivastava,et al.  Thin carbon film deposition using energetic ions of a dense plasma focus , 1997 .

[34]  W. Meng,et al.  Growth of aluminum nitride thin films on Si(111) and Si(001): Structural characteristics and development of intrinsic stresses , 1994 .

[35]  Tandon,et al.  Crystallization of an amorphous lead zirconate titanate thin film with a dense-plasma-focus device. , 1993, Physical review. B, Condensed matter.

[36]  H. Schmidt,et al.  Mass and energy analysis and space-resolved measurements of ions from plasma focus devices , 1980 .

[37]  H. Hayakawa,et al.  Reactive molecular beam epitaxy of aluminium nitride , 1979 .

[38]  B. Cullity,et al.  Elements of X-ray diffraction , 1957 .

[39]  T. L. Tan,et al.  Energetic ion irradiation of American diamond in a plasma focus device and characterization of irradiated material , 2006 .

[40]  S. Prawer,et al.  Crack-arresting compression layers produced by ion implantation , 2006 .

[41]  Suneet Tuli,et al.  Influence of rapid thermal annealing on morphological and electrical properties of RF sputtered AlN films , 2005 .

[42]  F. Falk,et al.  Deposition of SiC and AlN thin films by laser ablation , 1999 .

[43]  Suryadi,et al.  A simple facility for the teaching of plasma dynamics and plasma nuclear fusion , 1988 .

[44]  T. Tsukishima,et al.  Observations of Dynamic Behaviour of a Linear Turbulently-Heated Plasma Using Microwave Scattering , 1981 .