Hydrogen on Graphene Under Stress: Molecular Dissociation and Gap Opening

Density-functional calculations are employed to study the molecular dissociation of hydrogen on graphene, the diffusion of chemisorbed atomic species, and the electronic properties of the resulting hydrogen on graphene system. Our results show that applying stress to the graphene substrate can lower the barrier to dissociation of molecular hydrogen by a factor of 6 and change the process from endothermic to exothermic. These values for the barrier and the heat of reaction, unlike the zero stress values, are compatible with the time scales observed in experiments. Diffusion, on the other hand, is not greatly modified by stress. We analyze the electronic structure for configurations relevant to molecular dissociation and adsorption of atomic hydrogen on a graphene single layer. An absolute band gap of 0.5 eV is found for the equilibrium optimum configuration for a narrow range of coverages $(\ensuremath{\theta}\ensuremath{\approx}0.25)$. This value is in good agreement with experiment [D. Elias et al., Science 323, 610 (2009)].